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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB -- 135 Watts Power Gain -- 16.5 dB @ 130 Watts Output Power Efficiency -- 48% @ 130 Watts Output Power * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 GSM/GSM EDGE 921 - 960 MHz, 130 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9130LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9130LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 298 1.7 - 65 to +200 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.6 Unit C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M2 (Minimum) C7 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vds, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vds, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 3 3.6 0.2 12 4 -- 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) Power Output, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 921 and 960 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 130 W, IDQ = 1000 mA, f = 921 and 960 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 130 W CW, IDQ = 1000 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally input matched. Coss Crss -- -- 110 4.4 -- -- pF pF P1dB Gps IRL 120 15.5 43 -- 135 16.5 48 - 12 -- -- -- -9 W dB % dB No Degradation In Output Power Before and After Test MRF9130LR3 MRF9130LSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. R1 VGG + C1 C2 R2 C3 C6 C5 + C4 VDD R3 RF INPUT C10 Z1 C8 Z2 Z3 DUT C12 Z4 C14 C16 C19 Z5 C20 C21 Z6 C22 RF OUTPUT C7 C9 C11 C13 C15 C17 C18 Freescale Semiconductor, Inc... Figure 1. 921 - 960 MHz Test Circuit Schematic Table 1. 921 - 960 MHz Test Circuit Component Designations and Values Designators C1, C4 C2, C5 C3, C8, C21, C22 C6 C7 C9 C10 C11 C12, C13 C14, C15 C16, C17, C18 C19 C20 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 PCB Description 10 F, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 100 nF Chip Capacitors (1206), AVX #1206C104KATDA 22 pF, 100B Chip Capacitors, ATC #100B220C 33 pF, 100B Chip Capacitor, ATC #100B330JW 1.0 pF, 100B Chip Capacitor, ATC #100B1R0BW 4.7 pF, 100B Chip Capacitor, ATC #100B4R7BW 8.2 pF, 100B Chip Capacitor, ATC #100B8R2CW 10 pF, 100B Chip Capacitor, ATC #100B100GW 12 pF, 100B Chip Capacitors, ATC #100B120GW 2.7 pF, 100B Chip Capacitors, ATC #100B2R7BW 3.9 pF, 100B Chip Capacitors, ATC #100B3R9BW 3.3 pF, 100B Chip Capacitor, ATC #100B3R3BW 1.8 pF, 100B Chip Capacitor, ATC #100B1R8BW 18 kW, 1/8 W Chip Resistor (1206) 10 kW, 1/8 W Chip Resistor (1206) 1.0 kW, 1/8 W Chip Resistor (1206) 0.117 x 0.600 Microstrip 0.117 x 1.851 Microstrip 1.074 x 1.068 Microstrip 1.074 x 0.980 Microstrip 0.117 x 1.933 Microstrip 0.117 x 0.605 Microstrip Taconic TLX8, 0.030, r = 2.55 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 3 Freescale Semiconductor, Inc. VBIAS C1 R1 C2 R2 C7 C8 C3 C9 R3 C10 C12 C14 C16 C4 VSUPPLY C5 C6 C19 C20 C21 C11 C13 C15 C17 C18 C22 Freescale Semiconductor, Inc... Ground MRF9130L Ground Figure 2. 921 - 960 MHz Test Circuit Component Layout MRF9130LR3 MRF9130LSR3 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 18 17 Gps, POWER GAIN (dB) Gps 130 W 16 -10 Pout = 60 W 0 -5 IRL, INPUT RETURN LOSS (dB) 15 130 W 14 13 900 920 60 W IRL -15 -20 VDD = 28 Vdc IDQ = 1000 mA 940 960 980 -25 1000 f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 3. Power Gain and Input Return Loss versus Frequency 18 17.5 Gps, POWER GAIN (dB) 17 Gps 60 50 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 18 IDQ = 1200 mA 17 1000 mA 800 mA 16 600 mA 40 30 20 16.5 16 1 10 VDD = 28 Vdc IDQ = 1000 mA f = 940 MHz 100 1000 15 VDD = 28 Vdc f = 940 MHz 14 1 10 100 1000 Pout, OUTPUT POWER (WATTS) 15.5 15 10 0 Pout, OUTPUT POWER (dBm) Figure 4. Power Gain and Efficiency versus Output Power Figure 5. Power Gain versus Output Power 18 18 TC = -20C G ps , POWER GAIN (dB) 17 25C 50C 85C 16 G ps , POWER GAIN (dB) 17 16 15 30 V 28 V 14 IDQ = 1000 mA f = 940 MHz 13 1 10 100 VDD = 24 V 15 VDD = 28 Vdc IDQ = 1000 mA f = 940 MHz 1 10 100 1000 26 V 14 1000 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain versus Output Power Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 10 VDD = 28 Vdc IDQ = 800 mA f = 960 MHz 50 SPECTRAL REGROWTH (dBc) -50 -55 -60 -65 @ 400 kHz -70 -75 @ 600 kHz -80 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 0 -85 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 28 Vdc IDQ = 800 mA f = 960 MHz EVM (%) 6 30 4 20 2 EVM 10 Freescale Semiconductor, Inc... Figure 8. EVM and Efficiency versus Output Power NOTE: Curves on Figure 8 and 9 gathered on a GSM EDGE optimized text fixture. h, DRAIN EFFICIENCY (%) 8 40 Figure 9. Spectral Regrowth versus Output Power MRF9130LR3 MRF9130LSR3 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. f = 880 MHz Zload f = 1000 MHz Zo = 5 f = 880 MHz Freescale Semiconductor, Inc... Zsource f = 1000 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 130 W CW f MHz 880 920 960 1000 Zsource 0.63 - j1.66 0.67 - j1.88 0.82 - j2.18 0.86 - j2.56 Zload 0.82 - j0.36 0.72 - j0.30 0.74 - j0.37 0.69 - j0.79 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 7 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF9130LR3 MRF9130LSR3 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 9 Freescale Semiconductor, Inc. NOTES Freescale Semiconductor, Inc... MRF9130LR3 MRF9130LSR3 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N (LID) M TA B M ccc M TA M B M S M (INSULATOR) Freescale Semiconductor, Inc... H ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF9130LR3 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE F NI - 780S MRF9130LSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9130LR3 MRF9130LSR3 11 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9130LR3 MRF9130LSR3 12 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICEMRF9130L/D DATA |
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